Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects

ABSTRACT

A silicon-on-insulator (SOI) memory device (such as an SRAM) using negative differential resistance (NDR) elements is disclosed. Body effect performances for NDR FETs (and other FETs) that may be used in such device are enhanced by floating a body of some/all the NDR FETs.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a divisional of Ser. No. 10/215,137 filed Aug. 8, 2002, assigned to the present applicant, which is a continuation-in-part of Ser. No. 10/185,559 filed Jun. 28, 2002, assigned to the present applicant, and which is hereby incorporated by reference as if fully set forth herein for all permissible purposes.

FIELD OF THE INVENTION

This invention generally relates to semiconductor memory devices and technology, and in particular to SOI-based static random access memory (SRAM) devices that utilize negative differential resistance (NDR) elements.

BACKGROUND OF THE INVENTION

A new type of SRAM device using Negative Differential Resistance Field Effect Transistors (NDR FETs) is described in detail in a patent application Ser. No. 10/029,077 filed Dec. 21, 2001 by T J King and assigned to the present assignee, and published on May 9, 2002 as Publication No. 2002/0054502. The NDR FET structure, operation and method of making the same are discussed in detail in patent application Ser. No. 09/603,101 filed Jun. 22, 2000 by King et al., which is also assigned to the present assignee. Such details are also disclosed in a corresponding PCT application PCT/US01/19825 which was published as publication no. WO 01/99153 on Dec. 27, 2001. The above materials are hereby incorporated by reference.

As is well-known in the art, the “body effect” refers to a phenomenon in which a threshold voltage of a transistor is increased substantially when a body-to-source pn junction is reverse-biased. This effect can also influence SRAM embodiments which use NDR devices. For instance in the SRAM embodiment of FIG. 1, the body effect causes Vt of “pull-up” NDR FET 130 to be increased when data stored at node Vsn is a high value (Vdd); in such instances, a relatively high gate bias (Vdd+Vt) is required then to switch “pull-up” NDR FET 130.

Furthermore, recent developments in the integrated circuit industry have accentuated the need for so-called Silicon-on-Insulator (SOI) based devices. Thus there is clearly a need for an SOI NDR based SRAM device that have superior body effect characteristics.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a memory device, such as an SOI based static random access memory (SRAM) cell, which utilizes NDR FET elements and has improved body effect performance.

Thus, a first aspect of the invention provides for a memory device that includes a data transfer element (preferably a FET) adapted to facilitate (preferably through a WORD and BIT line) a read operation or a write operation involving a storage node of the memory cell (i.e., to charge or discharge such node to a high or low potential representing either a logical 1 or 0). A first negative differential resistance (NDR) element (preferably an NDR capable FET) is coupled to the data transfer element, the storage node and a first voltage potential. Thus, the first NDR element exhibits an NDR characteristic in a current path between the storage node and the first voltage potential. A second NDR element is coupled to the first NDR element (preferably in series in a pull-up/pull-down configuration), the data transfer element, the storage node and a second voltage potential. The second NDR element also exhibits an NDR characteristic in a current path located between the storage node and the second voltage potential.

The memory device in a preferred embodiment is a static random access memory (SRAM) cell used in an embedded environment, but other applications will benefit as well from the present teachings. A silicon-on-insulator (SOI) embodiment of a memory device using NDR elements employs a body region that is either floated (to reduce cell size and the body effect) or biased (to reduce floating body effects).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a static random access memory (SRAM) cell consisting of the combination of two NDR-FET elements which form a bistable latch and one n-channel enhancement-mode IGFET access element;

FIG. 2 is a plot of the current-vs.-voltage characteristic of the bistable latch formed by the combination of two NDR-FETs as shown in FIG. 1;

FIG. 3A is a top level view of a topology and layout for an SRAM cell of a first embodiment of an SRAM cell with reduced body effect, in which NDR-FET elements are connected and formed in common with an IGFET within a single p-type well;

FIG. 3B is a top level view of a topology and layout for an SRAM cell of a second embodiment of an SRAM cell with reduced body effect, in which NDR-FET elements are connected and formed in a first p-type well, while an IGFET transfer element is formed within a separate second p-type well using triple-well process;

FIG. 3C is a top level view of a topology and layout for an SRAM cell of a third embodiment of an SRAM cell with reduced body effect, in which one NDR-FET element is connected and formed in a first p-type well with an IGFET transfer element, while a second NDR FET element is formed within a separate second p-type well using a triple well process;

FIGS. 4 and 4A are cross-sectional and top views respectively of an exemplary SOI based NDR FET that can be used in an SRAM cell.

DETAILED DESCRIPTION OF THE INVENTION

Various embodiments of the invention are now described, including a preferred SOI embodiment.

As noted earlier, FIG. 1 is a circuit diagram of a preferred embodiment of a static memory (SRAM) cell 100 consisting of two NDR elements 120, 130 which form a bistable latch 140 and one enhancement-mode IGFET access element 110.

FIG. 2 is a current-vs.-voltage plot illustrating the operational characteristics of the static memory cell 100 of FIG. 1.

NDR elements 120, 130 of the present invention are preferably an NDR FET of the type referred to above in the aforementioned King et al. applications. The details of the same are provided for example in the aforementioned applications, and such documents are incorporated by reference herein primarily for the purpose of providing non-essential background information on representative types of environments in which the present inventions can be practiced. Other types of silicon based NDR FETs are clearly suitable and encompassed within the present teachings.

As noted earlier, the “body effect” is a well-known problem in memory (and other) applications in which the threshold voltage of a transistor (such as a pull up FET) is increased as a result of a logical high state being stored at a storage node V_(SN). In such instance, a body to source p-n junction is reverse-biased. For instance in the SRAM embodiment of FIG. 1, the body effect causes Vt of “pull-up” NDR FET 130 to be increased when data stored at node V_(SN) is higher than Vss; this increases the value of the gate bias (Vdd+Vt) required for the “pull-up” NDR FET 130 to maintain a high voltage (Vdd) at node V_(SN).

The inventor has determined nonetheless that the body effect can be virtually eliminated in such embodiments by electrically floating the body of any NDR elements used within an SRAM, including NDR FETs 120 and 130 of an SRAM cell 100 shown in FIG. 1.

FIRST EMBODIMENT

In a first embodiment of the invention shown in FIG. 3A a layout is optimized and made most compact by placing all of the elements (transistors in this case) in a single cell (FIG. 1) within a single well. As regards the layout of the cell and array shown in FIG. 3A, like numeric designations are intended to denote like structures and features already depicted in FIG. 1. It will be understood by those skilled in the art that the structure shown in FIG. 3A (and the other figures) is only intended to depict a small section of a representative memory array employing the present invention, and is not drawn to scale. The size, relationship and materials used for the structures shown in these figures may be altered significantly from that shown without departing from the present teachings.

Thus, in the case of an SRAM cell comprised entirely of N channel FETs (including NDR elements 320, 330 and the transfer gate 310 and other structures), a single P type well (p-well) 360 is formed within an N type substrate 380 using conventional techniques as seen in FIG. 3A. This p-well can be provided with a separate bias signal (WELL BIAS) at a well contact so that it can be biased or floated as is appropriate. Again it will be understood by those skilled in the art that a separate well bias contact/terminal may or may not be provided, and the figure is merely intended to facilitate understanding of the invention.

The remainder of the layout of a memory array as shown in FIG. 3A illustrates the following: a cell 300(1) highlighted in a hashed box includes an NDR pull-down element 320 with a source region 356 connected through a contact 318 to a ground or low reference potential Vss (the Vss line is not shown to avoid obscuring the invention) and an active region 357 forming a drain of NDR pull-down element 320 as well as a part of a storage node V_(SN). A bias line 354 provides a bias signal VB1 to NDR pull-down element 320, as well as to NDR pull-up element 330.

Active region 357 is also shared and acts as a source/drain region for NDR pull-up element 330 and a source/drain region for pass transistor 310. Thus, a single doped region in well 360 is preferably used by three separate FETs (including a mixture of regular FETs and NDR based FETs) to increase the integration density of cell 300.

NDR pull-up element 330 also has a source/drain region 358 connected to a positive or high reference potential Vdd at contact 317 (the Vdd line is also not shown to avoid obscuring the invention).

A word line WL1 311 provides an activation signal for Read/Write operations in conventional fashion, and further acts as a gate for pass transistor 310. A final source/drain region 314 for pass transistor 310 is connected to a Bit Line (again not shown to avoid obscuring the invention) through contact 316 for communicating data in and out of cell 300.

Other pertinent observations concerning an embodiment of the invention such as illustrated in FIG. 3A include: (1) cell size is reduced by sharing Vdd contact regions, Vss contact regions, and Bit Line contact regions between adjacent memory cells; (2) cell size is also reduced by forming both NDR and non-NDR elements with common regions within cell 300, such as active region 357; (3) processing complexity is reduced, because manufacturing operations for NDR and non-NDR elements are both effectuated using common CMOS techniques for isolation regions, active regions, gate insulators, gate interconnects, etc.

The most compact 3-T SRAM layout shown in FIG. 3A has a cell size of 16F², where F is the minimum feature size. This layout assumes that self-aligned, borderless contact process technology is available, and that the spacing between the NDR FETs and the regular FET can be minimal. For a 130 nm technology, the layout area is thus about 0.27 um², which is about 11% as big as (or 9× smaller than) a conventional 6-T SRAM. It should be noted that this is simply the smallest size available at this time given current processing techniques, and that other process improvements unforeseeable at this time to the inventor may yield additional cell size reductions.

Furthermore, the above presents one best case layout obtainable at this time, and it will be understood by those skilled in the art that current conventional 130 nm process geometry technologies may require different spacings, sizings, etc., so as to yield a cell as large as 40F². Nonetheless, since a conventional 6-T SRAM has an approximate surface area of about 2.43 um² the reduction is still extremely significant. In fact, the present cell in a worst case would be about 28% of the area required for a conventional cell, achieving better than a 3.5 times reduction in total area. Again, it will be understood of course that this figure will vary significantly from geometry-to-geometry and from fab-to-fab in accordance with specific design rules that are used for a particular process.

SECOND AND THIRD EMBODIMENTS

In other embodiments however, such as shown in FIGS. 3B and 3C, it may be desirable to only float the body of “pull-up” NDR FET 330, or the body of both the NDR FETs 320 and 330. Unless otherwise indicated, like numerals in FIGS. 3B and 3C are intended to refer to like structures from FIGS. 1 and 3A. Again, those skilled in the art will understand that the structure shown in FIGS. 3B and 3C is only intended to depict a small section of a representative memory array employing the present invention.

Thus, in a second embodiment of the invention, as seen in FIG. 3B, a well-known “triple-well” fabrication process is employed to provide separate body contacts and biasings for the NDR and non-NDR devices in an SRAM cell 300. That is, pass transistor 310 is situated in a p-well 350, while NDR FETs 320 and 330 are situated in a separate p-well 360. The two wells are isolated by an isolation region 351. P wells 350 and 360 are also commonly formed in an N-well 370, and the latter is also itself situated within a further P well 380. As formed, pass transistor 310 is connected to a word line 311 that forms also a gate electrode. A first source/drain region 314 is connected to a bit line 312, while a second source/drain region 313 is connected and forms part of the storage node having a voltage V_(SN). Thus, as formed, pass transistor 310 is located entirely within P well 350. Other pass transistors in the array (not shown) can also be formed within P well 350 and use a single common well bias contact for a well bias signal WELL1 BIAS.

Similarly, first NDR FET 320 includes an input bias line connected to a Vbias1 input VB1, and also forming part of a gate electrode. A first reference low voltage supply source Vss is provided to a contact formed in a first source/drain region 356. A second source/drain region 357 is shared with second NDR FET 330, and is also coupled through an interconnect 359 to pass transistor 310. This shared region also acts as part of the storage node VSN for SRAM cell 300.

Second NDR FET 330 includes an input bias line 354 connected to a Vbias2 input, and which also forms part of a gate electrode. In a preferred embodiment, Vbias1 and Vbias2 are connected to the same signal supply through a common interconnect 354. A second reference high voltage supply source Vdd is provided through a contact 317 which is coupled a third source/drain region 358.

As seen in FIG. 3B, both NDR FET 320 and NDR FET 330 (and other NDR FETs not shown) are formed in a p-well 360, which is separate from p-well 350 in which pass transistor 310 is formed. A bias signal WELL1 BIAS can be applied to a contact coupled to p-well 360 as shown, or in some other form.

Thus, separate body biasings can be provided to the different types of FETs (at respective contacts for WELL1 BIAS and WELL2 BIAS) in a single memory cell so that, for example, a body contact for NDR FETs 320, 330 can be left floating to reduce body effects.

To improve integration, NDR source/drain regions are shared within a cell, and adjacent cells also share common Vss and VDD contacts, and bit line contacts. Again it will be understood by those skilled in the art that separate well bias contacts may or may not be provided, and the figure is merely intended to facilitate understanding of the invention.

For a third embodiment of the invention, as seen in FIG. 3C, only one of the NDR FETs is formed in a separate p-well 360; namely, pull-up NDR FET 330. Such wells can be shared between adjacent cells and given separate bias contacts 390 as shown therein.

Other embodiments of the same will be apparent from the present teachings, and the present invention is by no means limited to the examples herein. Again it will be appreciated by those skilled in the art that the depicted layouts in FIGS. 3A, 3B and 3C are not intended to be to scale, and are not intended to describe every possible arrangement of the various structures and features therein. For example, the location and relative size of the interconnect layers (between source/drain regions) has been altered to make the features of the invention more apparent. Many other features shown may vary in size, relationship or structure from that illustrated. Other supporting structures may also be incorporated within an SRAM cell 100, including conventional NDR diodes.

Standard techniques for forming triple wells are well-known, and any suitable process can be employed with the present invention to achieve the result of allowing separate body biasing of the various elements in SRAM cells. It will be noted, of course, that the layout in triple well embodiments is not as compact (as can be seen by comparing FIGS. 3A, 3B and 3C) because of required well-to-well spacings within a cell, but it may be necessary in some applications.

Consequently, SRAM bulk Silicon embodiments of the present invention can include one or more of the following variations to improve body effect performance:

-   -   body floating for all elements (including the three transistors         as seen in FIG. 3A);     -   body floating for both NDR elements (as seen in FIG. 3B);     -   body floating for a “pull-up” (or load) NDR element only (as         seen in FIG. 3C).

FOURTH EMBODIMENT—SOI

In addition to bulk Si type cells of the type described above, a preferred embodiment of the present invention can also be effectuated in Silicon-on-Insulator (SOI) based substrates. As is well-known, SOI devices differ from bulk Si devices primarily by the fact that in the former a buried oxide layer insulates a thin silicon layer body (for the active devices) from the bulk Si substrate. The active devices are patterned (typically) as mesas above the buried oxide layer. The process is somewhat less mature than regular bulk Si CMOS processes, but the result is a pattern of distinct and individual active devices isolated from each other by the insulator layer with superior leakage and parasitic performance over bulk Si for fine scaled geometries.

Two particular types of SOI technology that can be used with the present invention include: (1) partially depleted; (2) fully depleted implementations. These are not intended to be exhaustive, of course, and it will be understood by those skilled in the art that the present invention is not limited to these specific types of SOI technology.

These cases are explained with reference to FIG. 4, which illustrates a cross section of a typical SOI transistor 401 which, as explained herein, can also be configured as NDR capable FETs. Each transistor is formed on bulk silicon substrate 405, and a buried oxide (insulator) layer 410. Each transistor further includes a pair of N+ source/drain regions (415, 425) doped N type (for an n channel device) and a body region 420 doped with a net P type concentration (as explained above for the bulk Si case). The source/drain (415, 425) and body structures (425) are typically formed by a thin single-crystalline silicon film that is later patterned and etched to yield the resulting structures shown in FIG. 4. A gate insulating layer 430 includes a trapping region 437 (of the type described in the aforementioned King et al applications) for forming traps, and the net P type concentration in body 420 (also formed as explained in the aforementioned King et al applications) help provide a carrier trapping effect to create an NDR effect as noted in such applications.

A gate contact 440 completes the device, and in most instances this is made of an N+ doped polycrystalline silicon material. An interconnect layer (not shown) contacts the NDR FET to provide an NDR bias signal of the type described earlier. It will be apparent that the as-shown SOI FET 401 can thus be adapted as an SOI NDR FET and incorporated for use in a memory cell 100 of the type shown in FIG. 1.

As seen in FIG. 4A, to implement the present invention in SOI therefore, a separate body contact (and interconnect) 450 are provided for each transistor 401, if body biasing is desired to operate in a non-floating body effect mode, because each transistor is fabricated in a separate “island” of SOI. It can be seen quite clearly (from for this single transistor case) that the layout area penalty for an array of such interconnected transistors configured for an SRAM is thus larger than for a bulk-Si technology in which many transistors can reside in a single well and body contact is provided to each of those transistors with a single well contact.

As an alternative, and in a preferred embodiment it is possible also to simply allow the bodies of SOI NDR transistors to “float”, that is, to not provide direct electrical contacts to the transistor body regions 420 to reduce the additional space consumed by such contact. This also cuts down significantly, of course, on the complexity of the process since separate interconnect layer(s) are not required for biasing the body regions.

In any event, with reference to FIG. 4, the partially depleted (1) case refers to the situation where an SOI layer 420 (forming the body regions of the NDR and non-NDR FETs) is partially depleted for a transistor in the ON state. In this case, the well-known “floating body effect” associated with SOI transistors will cause the drain current to increase at high drain voltages, resulting in a “kink” in the Ids vs. Vds characteristic for a fixed gate voltage (Vg>Vt).

This happens because impact ionization in the high-field region near the drain at high drain bias generates electron-hole pairs; the electrons flow out through the drain, while the holes flow in the body toward the source junction, accumulating there to forward bias the source pn junction and effectively lowering the transistor Vt. The “floating body effect” decreases the transistor Vt at high drain biases and thus will serve to increase the peak current of the NDR-FET; it will increase the valley current more so (since the valley current is exponentially dependent on Vt, while the peak current is linearly dependent on Vt), so the net effect will be a lower peak-to-valley current ratio (PVR).

In contrast, the fully depleted case (2) refers to a condition in which the body region can be fully depleted for a transistor in the ON state. In this case, the “floating body effect” is negligible, because the holes generated by impact ionization in the high-field region near the drain can flow through the body into the source relatively easily. Thus, the potential barrier to hole flow into the source is very small, for a fully depleted body. The detrimental effect on PVR is therefore avoided.

Consequently, in those embodiments where the “floating body effect” is a critical factor for a particular cell design and geometry, it is preferable to use a fully-depleted SOI technology for an SOI NDR based SRAM cell 100.

While the invention has been described with reference to illustrative embodiments, this description is not intended to be construed in a limiting sense. It will be clearly understood by those skilled in the art that foregoing description is merely by way of example and is not a limitation on the scope of the invention, which may be utilized in many types of integrated circuits made with conventional processing technologies. Various modifications and combinations of the illustrative embodiments, as well as other embodiments of the invention, will be apparent to persons skilled in the art upon reference to the description. Such modifications and combinations, of course, may use other features that are already known in lieu of or in addition to what is disclosed herein. It is therefore intended that the appended claims encompass any such modifications or embodiments.

While such claims have been formulated based on the particular embodiments described herein, it should be apparent the scope of the disclosure herein also applies to any novel and non-obvious feature (or combination thereof) disclosed explicitly or implicitly to one of skill in the art, regardless of whether such relates to the claims as provided below, and whether or not it solves and/or mitigates all of the same technical problems described above. Finally, the applicant further reserves the right to pursue new and/or additional claims directed to any such novel and non-obvious features during the prosecution of the present application (and/or any related applications). 

1. In a silicon on insulator (SOI) based memory device having three active elements, including a transfer field effect transistor (FET), a first negative differential resistance (NDR) element and a second NDR element that are operably interconnected to store a data value, the improvement comprising: at least one of the first NDR element and the second NDR element being implemented as a SOI-based NDR-capable FET; wherein a contact is provided to a body region of the SOI-based NDR capable FET so as to provide a bias signal and operate the SOI based memory device in a non-floating body effect mode.
 2. The SOI based memory device of claim 1, wherein said SOI-based NDR capable FET includes a charge trap region adapted for rapidly trapping and de-trapping charge to effectuate an NDR characteristic.
 3. The SOI based memory device of claim 2, wherein said charge trap region is formed between a channel region and a gate region of said SOI-based NDR capable FET.
 4. The SOI based memory device of claim 2, wherein said SOI-based NDR capable FET includes a body with a net P-type dopant concentration.
 5. The SOI based memory device of claim 1, wherein said second NDR element is a tunneling diode and/or an NDR capable FET.
 6. In a silicon on insulator (SOI) based memory device having three active elements, including a transfer field effect transistor (FET), a first negative differential resistance (NDR) element and a second NDR element that are operably interconnected to store a data value, the improvement comprising: at least one of the first NDR element and the second NDR element being implemented as a SOI-based NDR-capable FET; wherein a body region of the SOI-based NDR capable FET is floated so as to reduce a body effect.
 7. The SOI based memory device of claim 6, wherein during operation said body region can be fully depleted when said SOI-based NDR capable FET is turned on.
 8. The SOI based memory device of claim 6, wherein during operation said body region can only be partially depleted when said SOI-based NDR capable FET is turned on.
 9. The SOI based memory device of claim 6, further including a trapping layer located above said body region for effectuating said negative differential resistance.
 10. The SOI based memory device of claim 6, wherein exactly three active elements are used for each memory cell, and the transfer field effect transistor (FET), the first negative differential resistance (NDR) element and the second NDR element are all implemented in SOI form. 